HILLSBORO, Ore., Nov. 12, 2012 (GLOBE NEWSWIRE) -- FEI (Nasdaq:FEIC) today announced its new Helios NanoLab™ 450 F1 DualBeam™ system designed to provide semiconductor manufacturers with faster, better images of their most advanced device architectures. A new STEM (scanning transmission electron microscope) detector delivers improved contrast between materials, and the new flip stage and rotating nanomanipulator support advanced preparation techniques for complex device architectures, such as finFETs and three-dimensional (3D) memory structures. Ultimately, faster, better answers cut development costs, accelerate process ramps, and get new products to market sooner.
