INNOLUME Introduces a High-Power Broadband Gain Chip at 1.2µm

DORTMUND, GERMANY (September 14th, 2007) – Innolume, a leading provider of quantum-dot based laser diodes, gain chips and SOAs in the operational range of 1050nm – 1320nm, today announced it has begun sampling the GC-1200/160-200mW, a new generation gain chip providing broad optical gain centered at 1.2µm. The release of the GC-1200/160-200mW represents a further expansion of Innolume’s product lines beyond high power lasers and SOAs.