The integration of electronics into textiles is a burgeoning field of research that may soon enable smart fabrics and wearable electronics. Bringing this technology one step closer to fruition, Jin-Woo Han and Meyya Meyyappan at the Center for Nanotechnology at NASA Ames Research Center in Moffett Field, Calif., have developed a new flexible memory fabric woven together from interlocking strands of copper and copper-oxide wires. At each juncture, or stitch along the fabric, a nanoscale dab of platinum is placed between the fibers. This “sandwich structure” at each crossing forms a resistive memory circuit. Resistive memory has received much attention due to the simplicity of its design.
