For ion implantation, that is ‘hammering’ ions into the surface layer of the material, conventional ion accelerators are commonly used. Laser ion sources are much simpler, cheaper and more universal. However, they emit wide energy ions usually accompanied by some admixtures. In the Institute of Plasma Physics and Laser Microfusion in Warsaw a unique laser ion source has been built which is equipped with a special system for accelerating ions to a chosen energy and for eliminating admixtures. This device has already been used to produce samples of a new generation of semiconductors: a layer of silica (SiO2) in which germanium nanocrystals have been formed
