FEI Company and CEA-Leti Enter Joint Agreement to Characterize Advanced Semiconductor Materials

Published: Feb 22, 2011

HILLSBORO, Ore. and GRENOBLE, France, Feb. 22, 2011 (GLOBE NEWSWIRE) -- FEI (Nasdaq:FEIC) and CEA-Leti today announced the companies have entered into a three year agreement to characterize advanced semiconductor materials for the 22nm technology node and beyond. European-based CEA-Leti, with its two partners on the NanoCharacterization Platform of MINATEC Campus, CEA-Liten (new materials for new energies) and CEA-INAC (Nanoscience Institute), will apply their expertise in holography and nanobeam diffraction. FEI will provide advanced nanobeam diffraction technology with its Titan™ scanning transmission electron microscope (S/TEM), the world's most powerful, commercially-available microscope. The companies will measure strain changes in semiconductor structures.

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