December 28, 2011 -- Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.
The S11499 series is a family of PIN photodiodes utilising this new technology, offering a high sensitivity of 0.6A/W at 1060nm. This is three times the sensitivity of a typical silicon photodiode making it ideal for a wider range of applications. The S11499 series is available in 3mm diameter and 5mm diameter active area types, which offer 30MHz and 15MHz bandwidths respectively. Both feature low capacitances and are packaged in high reliability hermetically sealed packages.
Due to the increased sensitivity in the near-infrared region the S11499 IR-Enhanced PIN diodes are suitable for a wide range of applications including YAG laser monitors and many more.
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