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Controlling Silicon Evaporation Allows Scientists to Boost Graphene Quality, Georgia Tech Study


9/23/2011 8:02:47 AM

Scientists from the Georgia Institute of Technology have for the first time provided details of their "confinement controlled sublimation" technique for growing high-quality layers of epitaxial graphene on silicon carbide wafers. The technique relies on controlling the vapor pressure of gas-phase silicon in the high-temperature furnace used for fabricating the material.

Read at EurekAlert!

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